Element-to-element interconnection in semiconductor device

Details Element-to-element interconnection in semiconductor device Element-to-element interconnection in semiconductor device

1997-02-21

1999-01-05

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257326, H01L 29788

Patent

active

058566910

ABSTRACT:
A semiconductor device and a method of making the same. The semiconductor device comprises a semiconductor substrate, a transistor including a gate electrode having a first conductive layer formed on the semiconductor substrate and a second conductive layer formed thereon and a pair of impurity diffusion layers, and an electric element including a third conductive film positionally separated from the transistor formed on the semiconductor substrate and a fourth conductive layer formed on the third conductive layer wherein an insulating layer is formed between the third and fourth conductive layers, the fourth conductive layer extends to connect directly to one of the pair of impurity diffusion layers, the first and third conductive layers are made of the same conductive material, and the second and fourth conductive layers are made of the same conductive material.

REFERENCES:
patent: 4426764 (1984-01-01), Kosa et al.
patent: 5557566 (1996-09-01), Ochii

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