Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-31
1999-01-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, H01L 27108, H01L 2976, H01L 2794, H01L 31119
Patent
active
058566899
ABSTRACT:
There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
REFERENCES:
patent: 3859716 (1975-01-01), Tihanyi
patent: 4757026 (1988-07-01), Woo et al.
patent: 4876213 (1989-10-01), Pfiester
patent: 5266823 (1993-11-01), Noji et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5359219 (1994-10-01), Hwang
patent: 5396084 (1995-03-01), Matsumoto
patent: 5412240 (1995-05-01), Inoue et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5473184 (1995-12-01), Murai
patent: 5495121 (1996-02-01), Yamazaki et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5650636 (1997-07-01), Takemura et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5739549 (1998-04-01), Takemura et al.
Ferguson Jr. Gerald J.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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