Method of despositing an aluminum-rich layer

Details Method of despositing an aluminum-rich layer Method of despositing an aluminum-rich layer

1996-09-03

1998-09-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437197, 437198, 437199, 437245, 437203, H01L 21283

Patent

active

058077600

ABSTRACT:
A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

REFERENCES:
patent: 4275289 (1981-06-01), Lord
patent: 4361749 (1982-11-01), Lord
patent: 4495221 (1985-01-01), Broad bent
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4837183 (1989-06-01), Polito et al.
patent: 4891112 (1990-01-01), Wong
patent: 4903754 (1990-02-01), Hirscher et al.
patent: 4911812 (1990-03-01), Kudo et al.
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5108951 (1992-04-01), Chen et al.
3180 & 3190 Cassette-to-Cassette Sputtering Systems, Varian Corporation, Jan. 1984, p. 13.
Solid State Technology, Mar. 1990, pp; 73-79, "Aluminum Metallization for ULSI," D.Pramanik et al.
V-Mic Conf., Jun. 13-14, 1988, pp. 382-389, "A Simple Technique for A1 Planarization," P. Bai et al.

Affiliated with

Also associated with

Rating

Method of despositing an aluminum-rich layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of despositing an aluminum-rich layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of despositing an aluminum-rich layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-86477