Single crystal of nitride and process for preparing the same

Details Single crystal of nitride and process for preparing the same Single crystal of nitride and process for preparing the same

1997-06-04

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

428694, 423111, H01L 2131

Patent

active

060017481

ABSTRACT:
A single crystal of a nitride having a length of not less than 10 mm, a width of not less than 10 mm and a thickness of not less than 300 .mu.m, or having a length of not less than 20 mm and a diameter of not less than 10 .mu.m. In the production of the single crystal, either a mixed powder composed of a nitride powder and an oxide powder or an amorphous nitride powder is provided as a source material powder, the source material powder is heated in a nitrogen atmosphere or in a nitrogen atmosphere containing hydrogen and/or carbon at a temperature below the sublimation temperature or melting temperature of the nitride to decompose and vaporize the nitride powder, and the decomposed and vaporized component is subjected to crystal growth from the vapor phase on a substrate. The nitride single crystal is useful as a bulk material for heat sinks, electric and electronic components, such as semiconductors, optical components, and components of electric equipment and office automation equipment.

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