Dual damascene technique

Details Dual damascene technique Dual damascene technique

1998-07-06

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438437, 257587, H01L 2128

Patent

active

06001735&

ABSTRACT:
A method of forming a dual damascene structure includes forming an oxide layer and a mask layer there on, which both have protuberances over the conductive layers. Then a chemical mechanical polishing is performed to remove the protuberances and to form openings. The protuberances are above the conductive layers.

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