Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1997-03-28

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438687, 438688, 438618, H01L 214763

Patent

active

060017279

ABSTRACT:
In a semiconductor device in which a wiring layer is formed on the surface of a layer having a stepped portion, the wiring layer formed contains hydrogen at least at its surface portion. In a process for fabricating the semiconductor device, hydrogen is incorporated in the wiring layer in the course of, or after, the formation of the wiring layer. In particular, the wiring is heated at a temperature of from 150.degree. C. to 450.degree. C. in an atmosphere containing hydrogen gas, radical hydrogen or plasma hydrogen, without the step of exposure to the atmosphere, in the course of, or after, the formation of the wiring layer. The wiring layer is formed in an Ar and/or Xe plasma containing from 0.1% to 10% of at least one of hydrogen, radical hydrogen and plasma hydrogen.

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