Method for making field oxide of semiconductor device

Details Method for making field oxide of semiconductor device Method for making field oxide of semiconductor device

1997-11-04

1999-01-05

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438448, 438928, 438938, H01L 2176

Patent

active

058562303

ABSTRACT:
There is disclosed a method for making a field oxide, by which wafer warpage is minimized when a local oxidation of silicon process is applied for a large wafer. A material layer having a compressive stress and a nitride are laminated over the back side of a wafer, so that the compressive stress of the material layer complementarily interacts with the tensile stress of the nitride.

REFERENCES:
patent: 5212111 (1993-05-01), Doan et al.

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