Photo mask and apparatus for repairing photo mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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active

058076506

ABSTRACT:
A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF.sub.2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF.sub.2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.

REFERENCES:
patent: 5035787 (1991-07-01), Parker et al.
patent: 5085957 (1992-02-01), Hosono
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5358806 (1994-10-01), Haraichi et al.
patent: 5439763 (1995-08-01), Shimase et al.
Extended Abstracts (The 51st Autumn Meeting, Mar. 1990); The Japan Society of Applied Physics No. 2.

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