Electrically alterable non-voltatile memory with N-bits per memo

Details Electrically alterable non-voltatile memory with N-bits per memo Electrically alterable non-voltatile memory with N-bits per memo

1993-06-04

1995-02-28

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

365168, 365185, 365 45, G11C 1140

Patent

active

053943627

ABSTRACT:
The bit storage density of an Electrically Alterable Non-Volatile Memory (EANVM) cell is improved by increasing the number of bits that are stored on an individual memory cell, without increasing the size and complexity of the memory cell, by allowing a non-volatile memory cell to assume 2 n discrete memory states. A multi-bit memory cell uses a floating gate FET which is electrically programmed to 2 n different thresholds. The 2 n different conductivity states of the FET are provided as information storage states for the cell.

REFERENCES:
patent: 4004159 (1977-01-01), Rai et al.
patent: 5218569 (1993-06-01), Banks

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