Semiconductor device with reduced high voltage termination area

Details Semiconductor device with reduced high voltage termination area Semiconductor device with reduced high voltage termination area

1993-12-22

1995-01-10

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257337, 257339, 257341, 257491, H01L 2358, H01L 2976, H01L 2994

Patent

active

053810317

ABSTRACT:
A semiconductor device (12) with reduced high voltage termination area and high breakdown voltage. The device comprises first and second field shield plates (46), (48). The first field shield plate (46) is disposed above a high voltage first impurity region (22) and a junction extension doped region (42) and is in contact with a conductive material (26) which comprises the high voltage terminal of the device (12). A second field shield plate (48) is disposed above a low voltage second impurity region (30) and the junction extension doped region (42) and is covered by an extended portion (35) of a low voltage source contact (34).

REFERENCES:
patent: 4532534 (1985-07-01), Ford et al.
patent: 4605948 (1986-08-01), Martinelli
patent: 5270568 (1993-12-01), Terashima

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