Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-03
1999-08-03
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257750, 257773, 438622, 438637, 438638, 438675, H01L 2352
Patent
active
059329289
ABSTRACT:
Interconnections to a semiconductor structure are formed by alternating ribs and contact lines which are substantially orthogonal to each other and separated from one another in two dimensions. Each contact line is connected to conductive contacts which extend through an insulation layer. The ribs, conductive contacts and contact lines are produced from a conductive layer formed over the insulation layer after the insulation layer has been masked and etched. The ribs are isolated from the contact lines and connected conductive contacts by etching the ribs to a depth below the surface of the insulation layer upon which the contact lines are located. The ribs and conductive contacts can be formed over conductive plugs which are preformed through an insulation layer formed over the semiconductor structure. The ribs, conductive contacts and conductive plugs can also be formed together. A mask is formed between bottom and top insulating layers to locate the conductive plugs. The top insulation layer is masked and etched to form the trenches and contact openings with openings through the bottom insulation layer being etched through the mask which prevents the bottom insulation layer from being etched other than to form openings for the conductive plugs. A layer of conductive material is then formed to fill the conducive plug openings, corresponding openings in the mask, the trenches and contact openings.
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Eckert II George C.
Martin-Wallace Valencia
Micro)n Technology, Inc.
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