Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-14
1999-08-03
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257412, 257413, H01L 2976, H01L 2994, H01L 31062
Patent
active
059329190
ABSTRACT:
In the manufacture of CMOS devices, the n+ gate is partially counterdoped with boron to produce a modified p-type FET that has improved short channel effects, reduced gate induced drain leakage and gate oxide fields for improved reliability. A doped polysilicon layer is formed over a silicon or silicon oxide substrate, and is counterdoped with boron to a level of about 1.times.10.sup.13 /cm.sup.2 to 5.times.10.sup.16 /cm.sup.2 to adjust the work function but without changing the essentially n-type character of the gate electrode. This single counterdoping step achieves improved results for sub-micron devices at low cost. For CMOS device manufacturing, the alternating n-type and p-type devices are made in similar manner but reversing the n-type and p-type dopants.
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Ahmed Adel A.
Fahmy Wael M.
Morris Birgit E.
Siemens Aktiengesellschaft
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