Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-22
1999-08-03
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257358, 257359, 257360, 257361, 257362, 257363, H01L 2704
Patent
active
059329149
ABSTRACT:
The present invention provides an electrostatic breakdown protecting device which has a high electrostatic breakdown resistance, a high latch up resistance and an excellent protective ability and which has no dead space in the vicinity of protective elements. The present invention includes an I/O terminal directly connected to a protective diode comprising a p-type diffusion layer 103a and an n-type diffusion layer 102b, and an NPN protective bipolar transistor comprising n-type diffusion layers 102b, 102c and a p-type well 113 and connected to an NMOSFET for protection comprising n-type diffusion layers 102c, 102d and a gate electrode 105 via an input resistor 114. These protective elements are formed on the p-type well 113 separated from a substrate for an internal circuit by an n-type buried diffusion layer 111 and an n-type well 112. The internal circuit to be protected is connected to a drain 102d of the NMOSFET for protection.
REFERENCES:
patent: 5248892 (1993-09-01), Van Roozendaal et al.
patent: 5324982 (1994-06-01), Nakazato et al.
patent: 5449939 (1995-09-01), Horiguchi et al.
patent: 5623387 (1997-04-01), Li et al.
F. Fong and C. Hu, "Internal ESD Transients in Input Protection Circuits", 1989 IEEE/IRPS, pp. 77-81.
Abraham Fetsum
NEC Corporation
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