Method, materials, and structures for noble metal electrode cont

Details Method, materials, and structures for noble metal electrode cont Method, materials, and structures for noble metal electrode cont

1997-05-30

1999-08-03

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257751, 257769, 257770, 257761, 257754, 257755, H01L 27112, H01L 2704

Patent

active

059329076

ABSTRACT:
A layered structure is described incorporating a noble metal silicide, a noble metal and an oxygen-rich barrier layer between the noble metal silicide and noble metal. A silicon-contributing substrate may also be present in addition to or without the noble metal silicide. The invention overcomes a problem in fabricating capacitors containing high-epsilon dielectric materials or ferroelectric memory elements containing ferroelectric material, namely that silicon diffuses through the electrode in one direction and oxygen diffuses through the electrode in the other direction during the high temperature (400-700.degree. C.) deposition and processing of the dielectric.

REFERENCES:
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5504041 (1996-04-01), Summerfelt et al.
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5652464 (1997-07-01), Liao et al.
patent: 5739579 (1998-04-01), Chiang et al.
C. Harder et al., "Morphology Dependent Platinum Silicide Formation in Oxygen Ambients", Phys. Stat. sol. (a) 146, pp. 385-392 (1994).
S. P. Muraka, "Application of CoSi2 To VLSI and ULSI", Mat. Res. Soc. Symp. Proc. vol. 320,pp. 3-13, (1994).
Use of conducting oxides as a diffusion barrier in shallow junction semiconductor devices. IBM Technical Disclosure Bulletin, vol. 30, No. 8 pp. 436-437, Jan. 1998.

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