Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-13
1999-08-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257291, 257292, 257443, 257448, 257462, H01L 31062, H01L 31113
Patent
active
059329025
ABSTRACT:
A solid-state imaging device has a plurality of photodetector elements arranged on a substrate for photoelectrically converting incident light into signal charges, storing the signal charges, and producing an output signal voltage depending on the amount of the stored signal charges. Element-separating electrodes electrically separate adjacent ones of the photodetector elements from each other. Each of the photodetector elements has a control electrode and a gate insulating film below the control electrode. The gate insulating film has a film thickness varying in the width direction of a channel of the gate insulating film.
REFERENCES:
patent: 4041519 (1977-08-01), Melen
patent: 4972243 (1990-11-01), Sugawa et al.
patent: 5355013 (1994-10-01), Parker
patent: 5726439 (1998-03-01), Miyawaki et al.
Mintel William
Sony Corporation
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