Methods for forming alumina masking

Details Methods for forming alumina masking Methods for forming alumina masking

1996-10-23

1999-08-03

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 438742, 216 51, 216 72, 216 76, B44C 122

Patent

active

059324929

ABSTRACT:
A method for forming a capacitor structure includes the steps of forming a conductive layer in a substrate, and forming a dielectric layer on the conductive layer opposite the substrate. An aluminum layer is formed on the dielectric layer, and this aluminum layer is patterned so that portions of the dielectric layer are exposed. The patterned aluminum layer is then oxidized to form an alumina masking layer. The alumina masking layer can then be used to selectively etch portions of the dielectric and conductive layers exposed thereby. Related systems are also disclosed.

REFERENCES:
patent: 5311338 (1994-05-01), Kim et al.
patent: 5521465 (1996-05-01), Budzilek et al.
Lynn R. Allen et al., Vacuum Ultraviolet Substrate Cleaning And Etching, Vacuum Technology, Solid State Technology, May 1995, pp. 77-80.

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