Shield and collimator pasting deposition chamber with a wafer su

Details Shield and collimator pasting deposition chamber with a wafer su Shield and collimator pasting deposition chamber with a wafer su

1993-06-11

1995-01-10

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419212, 20429811, 20429826, C23C 1434

Patent

active

053804147

ABSTRACT:
A deposition chamber includes a target and an acceptor for supporting a wafer during a deposition cycle. The acceptor is made out of a pasting material in order that a pasting cycle can be run periodically in the deposition chamber to form a barrier between the layers of the target material to prevent the layer of target material from becoming too thick and thereby cracking and flaking. A shield protects the interior of the chamber during a deposition cycle. A collimator may be present between the target and the acceptor. A plasma is formed in the chamber and selectively attracted toward the target for deposition of target material onto a wafer or toward the acceptor for pasting acceptor material onto the shield and the bottom of the collimator, if present. A plurality of wafers are cycled through the deposition chamber for depositing the deposition material on their surface. After the plurality of wafers, a pasting cycle is run, depositing the pasting material around the interior of the shield, on the collimator and on the target. The target is then cleaned of pasting material while using a dummy wafer in the deposition chamber.

REFERENCES:
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 5178738 (1993-01-01), Ishikawa et al.
patent: 5202008 (1993-04-01), Talieh et al.
patent: 5232571 (1993-08-01), Braymen

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