Deposition of silicon nitride thin films

Details Deposition of silicon nitride thin films Deposition of silicon nitride thin films

1993-03-16

1999-08-03

Dudash, Diana

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

42725511, 427255394, C23C 1634

Patent

active

059322861

ABSTRACT:
Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.

REFERENCES:
patent: 4395438 (1983-07-01), Chiang
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5085887 (1992-02-01), Adams et al.

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