Vertical slot bottom bipolar transistor structure

Fishing – trapping – and vermin destroying

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437 67, 357 34, 357 55, H01L 2131, H01L 2176

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047496614

ABSTRACT:
An improved bipolar slot transistor vertically formed in a slot in an integrated circuit structure is disclosed. The transistor is formed in a substantially vertical slot having an active base region formed beneath the bottom of the slot and comprises an active collector region formed beneath the active base region, a buried collector layer beneath the active collector region and in communication with a collector contact; an emitter region formed in the slot over the active base region; and extrinsic base regions formed adjacent to but insulated from the sidewalls of the slot communicating with the active base region and with base contact regions on the surface of the structure.

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