SRAM with dual word lines overlapping drive transistor gates

Details SRAM with dual word lines overlapping drive transistor gates SRAM with dual word lines overlapping drive transistor gates

1991-02-11

1993-08-24

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257 69, 365154, H01L 2711

Patent

active

052391965

ABSTRACT:
A MOSFET Static Random Access Memory (SRAM) cell has a symmetrical construction, with a pair of word lines. The word lines are in second level polysilicon, so that they may overlap the driving transistor gates which are in first level polysilicon.

REFERENCES:
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4890145 (1989-12-01), Ikeda et al.
patent: 4951112 (1990-08-01), Choi et al.
Kertis et al, IEEE Journal of Solid State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1048-1053, see p. 1049, FIG. 3.
Sasaki et al, IEEE J of Solid State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1219-1225.
Ando et al, IEEE J of Solid State Circuits vol. 24, No. 5, Oct. 1989, pp. 1708-1713.
Yamanaka et al, IEEE IEDM Tech. Digest, Dec. 1988, pp. 48-51.

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