Thin-film dual gate, common channel semiconductor device having

Details Thin-film dual gate, common channel semiconductor device having Thin-film dual gate, common channel semiconductor device having

1997-03-14

1999-09-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257347, 257366, 257 59, 438149, 438157, 438158, 438176, 438195, H01L 21265

Patent

active

059557656

ABSTRACT:
An insulated-gate thin-film semiconductor device having reduced leakage current. The device has a thin-film semiconductor in which source and drain regions are formed. First and second electrodes are formed on opposite sides of the thin-film semiconductor. At least one of the second electrodes electrically overlaps none of the source and drain regions. When a reverse bias voltage is applied to the first gate electrode (i.e., in an unselected state), a forward bias voltage is applied to the second gate electrode, thus controlling the leakage current path. Thus, the resistance in the unselected state is increased. Consequently, the leakage current is reduced. Because of this construction, the on/off current ratio of the thin-film transistor can be enhanced.

REFERENCES:
patent: 5446299 (1995-08-01), Acovic et al.
patent: 5580802 (1996-12-01), Mayer et al.

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