Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-29
1999-09-21
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257301, 257303, 257306, 257310, H01L 2994
Patent
active
059557567
ABSTRACT:
A discontinuous film structure on a substrate, with an etch stop layer on the substrate, a separator layer with an opening formed therein on the etch stop layer and a discontinuous-as-deposited film on the separator layer, the discontinuity substantially in register with the opening. The structure is made into a stacked capacitor with the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.
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Kotecki David E.
Ma William H.
Anderson Jay H.
International Business Machines - Corporation
Martin-Wallace Valencia
Mortinger Alison D.
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