Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-22
1999-09-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257231, 257236, 257239, 257296, 257313, 257448, 257461, H01L 31062, H01L 31113
Patent
active
059557532
ABSTRACT:
In order to realize a multi-function sensor in which a reduction of a CMOS sensor and an addition of pixel signals are performed in a pixel portion and, further, an addition and a non-addition can be arbitrarily performed, there is provided a solid state image pickup apparatus in which charges generated by a photoelectric converting device are perfectly transferred to a floating diffusion portion through a transfer switch and a change in electric potential of the floating diffusion portion is outputted to the outside by a source-follower amplifier. A few photoelectric converting devices are connected to one floating diffusion portion through the transfer switch. One set of a few source-follower amplifiers are formed for a few pixels. The photoelectric converting device is constructed by an MOS transistor gate and a depletion layer under the gate.
REFERENCES:
patent: 5220170 (1993-06-01), Cox et al.
patent: 5376813 (1994-12-01), Delbruck et al.
patent: 5631704 (1997-05-01), Dickinson et al.
"CMOS Active Pixel Image Sensor", IEEE Transactions on Electron Devices, vol. 41, No. 3, Mar. 1994.
Canon Kabushiki Kaisha
Ngo Ngan V.
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