Semiconductor device with stable threshold voltages

Details Semiconductor device with stable threshold voltages Semiconductor device with stable threshold voltages

1996-11-06

1999-12-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059988436

ABSTRACT:
A semiconductor device includes complementary first and second MOS transistors of different conductivity types and a bipolar transistor which are formed on a common substrate. The first MOS transistor has a first gate electrode of a polysilicon layer doped with impurities of a first conductivity type and a second conductivity type. A concentration of the impurities of the first conductivity type is higher than that of the second conductivity type. The second MOS transistor has a second gate electrode of a polysilicon layer doped with impurities of the second conductivity type, and the bipolar transistor has an emitter electrode of a polysilicon layer doped with impurities of the second conductivity type. The impurities of the second conductivity type doped into the polysilicon layers of the second gate electrode and the emitter electrode may include one kind of impurity ions or two different kinds of impurity ions, while the impurities of the second conductivity type doped into the polysilicon layer of the first gate electrode includes one kind of impurity ions.

REFERENCES:
Wolf et al, "Silicon Processing for the VLSI Era" vol. 3, pp. 588-589, .COPYRGT. 1986.
Hsu et al, "Hot Electron Degradation in Submicron VLSI", IEDM 1985 pp. 48-51, 1985.
Muller et al, Device Electronics for IC's , pp. 462-463, 1986.

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