Metal oxide semiconductor device for an electro-static discharge

Details Metal oxide semiconductor device for an electro-static discharge Metal oxide semiconductor device for an electro-static discharge

1997-10-22

1999-12-07

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257336, H01L 2978

Patent

active

059988320

ABSTRACT:
An improved metal oxide field effect transistor (MOSFET) provides an electro-static protection device with a high resistance to electro-static discharge. The electro-static discharge protection device has pre-gate heavily doped regions adjacent to the source and drain regions, where the pre-gate regions extend at least partially under the gate electrode. A single heavily doped pre-gate region may be provided for the MOSFET of the electro-static discharge protection circuit.

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