Semiconductor device having nitrogen introduced in its polysilic

Details Semiconductor device having nitrogen introduced in its polysilic Semiconductor device having nitrogen introduced in its polysilic

1997-10-27

1999-12-07

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257376, 257405, 257410, 257412, H01L 21265

Patent

active

059988282

ABSTRACT:
In a semiconductor device and a method of manufacturing the same according to the present invention, a trade-off relationship between threshold values and a diffusion layer leakage is eliminated and it is not necessary to form gate oxide films at more than one stages. Since doses of nitrogen are different from each other between gate electrodes (4A to 4C) of N-channel type MOS transistors (T41 to T43), concentrations of nitrogen in the nitrogen-introduced regions (N1 to N3) are accordingly different from each other. Concentrations of nitrogen in the gate electrodes are progressively lower in the order of expected higher threshold values.

REFERENCES:
patent: 4774197 (1988-09-01), Haddad et al.
patent: 5674788 (1997-10-01), Wristers et al.
patent: 5731233 (1998-03-01), Yamashita et al.
patent: 5869366 (1999-02-01), Honnigford et al.
C. Kuo, "Embedded Flash Memory Applications, Technology and Design", 1995 IEDM Short Course, Motorola Inc., Austin, Texas, 1995.

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