Protection structures for the suppression of plasma damage

Details Protection structures for the suppression of plasma damage Protection structures for the suppression of plasma damage

1997-12-09

1999-12-07

Stinson, Frankie L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438132, 438196, 438281, 438601, 216 18, 216 39, 216 75, 216 79, H01L 21283

Patent

active

059982993

ABSTRACT:
Protection structures for suppressing plasma damage. Plasma damage is shown to occur primarily during a metal clear portion of a metal etch as opposed to also occurring during the overetch portion of the etch. The protection structures (202) provide a temporary connection between the metal layer (210) being etched and the substrate or a protection device during the clear portion of the etch. This temporary connection (202) is removed as the metal (210) is cleared.

REFERENCES:
patent: 5691234 (1997-11-01), Su et al.
patent: 5702566 (1997-12-01), Tsui
patent: 5767006 (1998-06-01), Lee
patent: 5817577 (1998-10-01), Ko
IEDM, San Francisco, Dec. 1996, "Inductively Coupled Plasma (ICP) Metal Etch Damage to 35-60A Gate Oxide", (Srikanth Krishnan, W.W. Dostalik, Ken Brennan and Shian Aur).

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