Silicon wafer having plasma CVD gettering layer with components/

Details Silicon wafer having plasma CVD gettering layer with components/ Silicon wafer having plasma CVD gettering layer with components/

1997-08-11

1999-12-07

Bowers, Charles

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

438680, 438471, 438778, 438788, 438DIG928, 257DIG913, 148DIG24, 148DIG60, H01L 21322, H01L 2144

Patent

active

059982837

ABSTRACT:
In a silicon wafer having a CVD film formed on one main face and having the other main face mirror-polished, the components and/or composition of the CVD film change in the thicknesswise direction of the film. This makes it possible to provide a silicon wafer having a thin film provided on the back surface, which thin film has excellent and persistent gettering capability that can remove a greater variety of types of elements and can prevent autodoping.

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patent: 5798294 (1998-08-01), Okonogi

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