Method to form global planarized shallow trench isolation

Details Method to form global planarized shallow trench isolation Method to form global planarized shallow trench isolation

1998-03-13

1999-12-07

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438423, 438440, 438766, H01L 2176

Patent

active

059982772

ABSTRACT:
The method of the present invention is a method of including forming an oxide layer on the substrate. A nitride layer is subsequently formed on the oxide layer. A photoresist layer is formed on the nitride layer to define isolation regions that uncovered by the photoresist layer. A liquid phase deposition oxide is deposited on the isolation regions. Then the photoresist layer is removed. After removing the photoresist layer, an oxygen ion implantation is performed through the oxide layer and the nitride layer into the substrate by using the liquid phase deposition oxide layer as implant mask to form relative high oxygen ion contained regions in the substrate. After the ion implantation is done, the liquid phase deposition oxide layer is removed. An annealing process is carried out to form isolation regions in the substrate and recover implant-induced damage.

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