Method of selectively etching high impurity concentration semico

Details Method of selectively etching high impurity concentration semico Method of selectively etching high impurity concentration semico

1984-09-19

1985-11-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 148187, 156628, 156657, 1566591, 156662, 252 793, 252 794, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045540462

ABSTRACT:
A method for selectively etching a high impurity concentration semiconductor layer by making use of a difference in impurity concentration is disclosed. According to this method, the high impurity concentration semiconductor layer is exposed to an aqueous solution of a hydrogen fluoride-nitric acid-acetic acid-based etching solution while being subjected to ultrasonic-vibration.

REFERENCES:
patent: 2854358 (1958-09-01), Schwartz
patent: 3290192 (1966-12-01), Kelley
patent: 4372803 (1983-02-01), Gigante

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