Low gate resistance high-speed MOS-technology integrated structu

Details Low gate resistance high-speed MOS-technology integrated structu Low gate resistance high-speed MOS-technology integrated structu

1995-07-13

1999-03-16

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257754, 257757, 257768, 257336, 257344, H01L 2978, H01L 2348, H01L 2946, H01L 2962

Patent

active

058834125

ABSTRACT:
A high-speed MOS-technology power device integrated structure includes a plurality of elementary functional units formed in a lightly doped semiconductor layer of a first conductivity type, the elementary functional units including channel regions of a second conductivity type covered by a conductive insulated gate layer including a polysilicon layer; the conductive insulated gate layer also including a highly conductive layer superimposed over the polysilicon layer and having a resistivity much lower than the resistivity of the polysilicon layer, so that a resistance introduced by the polysilicon layer is shunted with a resistance introduced by the highly conductive layer and the overall resistivity of the conductive insulated gate layer is lowered.

REFERENCES:
patent: 4412242 (1983-10-01), Herman et al.
patent: 4417385 (1983-11-01), Temple
patent: 4816882 (1989-03-01), Blanchard et al.
patent: 4893165 (1990-01-01), Miller et al.
patent: 4916509 (1990-04-01), Blanchard et al.
patent: 4920388 (1990-04-01), Blanchard et al.
patent: 4975782 (1990-12-01), Bauer
patent: 4985740 (1991-01-01), Shenai et al.
patent: 4998151 (1991-03-01), Korman et al.
patent: 5047833 (1991-09-01), Gould
patent: 5119153 (1992-06-01), Korman et al.
patent: 5194929 (1993-03-01), Ohshima et al.
patent: 5234851 (1993-08-01), Korman et al.
patent: 5248891 (1993-09-01), Takato et al.
patent: 5373059 (1994-06-01), Rutter et al.
patent: 5404040 (1995-04-01), Hshieh et al.
patent: 5444271 (1995-08-01), Kuwahara
patent: 5486715 (1996-01-01), Zommer et al.
patent: 5521409 (1996-05-01), Hshieh et al.
European Search Report from European Patent Application Number 9483035517, Filed Jul. 14, 1994.
Patent Abstracts of Japan, vol. 16, No. 275 (E-1219) Jun. 19, 1992 & JP-A-04 065 132 (OKI Electric Ind Co Ltd).
Intel Corporation Mountain View, University of California, Berkeley, John Wiley & Sons, A.S. Grove "Physics and Technology of Semiconductor Devices" .

Affiliated with

Also associated with

Rating

Low gate resistance high-speed MOS-technology integrated structu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low gate resistance high-speed MOS-technology integrated structu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low gate resistance high-speed MOS-technology integrated structu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-819911