Semiconductor memory device and method for making the same

Details Semiconductor memory device and method for making the same Semiconductor memory device and method for making the same

1994-08-26

1999-03-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257313, 257655, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058834087

ABSTRACT:
A semiconductor memory device comprises a capacitor and a transistor formed on a main surface of a semiconductor substrate and a buried layer of high impurity concentration formed in the substrate, wherein the buried layer has the same conductivity type as that of the substrate and is formed shallow under the capacitor and deep under the transistor.

REFERENCES:
patent: 4247862 (1981-01-01), Klein
patent: 4355374 (1982-10-01), Sakai et al.
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4745454 (1988-05-01), Erb
patent: 5047818 (1991-09-01), Tsukamoto
Wordeman et al, "A Buried N-Grid For Protection Against Radiation Induced Charge Collection in Electronic Circuits", IEDM 81, pp. 40 to 43.

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