Semiconductor memory device having current type sense amplifier

Static information storage and retrieval – Read/write circuit – Differential sensing

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307530, G11C 1134

Patent

active

049891847

ABSTRACT:
In a read only memory, a current type sense amplifiers connected to an array of memory cells includes a charge supply circuit for maintaining an output voltage of an inverter. At the time of first accessing, when the input node is brought to temporarlly increased potential level by the delay at the inverter, the node is maintained at a predetermined potential level by the operation of the circuit. In this manner, the time until the node is changed to the high level at the time of second accessing may be shortened. That is, the operating speed of the sense amplifier is increased.

REFERENCES:
M. Yoshida et al, "An 80ns Address-Data Multiplex 1Mb EMOS EPROM", Digest of Technical Papers, Feb. 1987, pp. 70-71.

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