Semiconductor etching by hyperthermal neutral beams

Details Semiconductor etching by hyperthermal neutral beams Semiconductor etching by hyperthermal neutral beams

1997-11-03

1999-03-16

Gorgos, Kathryn

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 65, 250251, 438706, H01L 21302, H05H 300

Patent

active

058830057

ABSTRACT:
An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

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