Circuit device interconnection by direct writing of patterns the

Details Circuit device interconnection by direct writing of patterns the Circuit device interconnection by direct writing of patterns the

1997-09-05

1999-03-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438491, H01L 21265

Patent

active

058830006

ABSTRACT:
An apparatus and method wherein conductive patterns are written in amorphous silicon or polysilicon deposited on an integrated circuit and used for interconnecting circuit elements contained therein. The substantially pure amorphous silicon or polysilicon is deposited onto an integrated circuit face at low temperature. A Focused Ion Beam deposition system deposits dopant atoms into the deposited pure silicon in a desired pattern. The dopant atoms are then activated by heat from a focused laser beam which adiabatically anneals the specifically doped areas of the deposited silicon. The resulting annealed doped areas of the silicon have low resistance suitable for circuit conductors. The surrounding undoped silicon remains a high resistance and a good insulator.

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