Semiconductor integrated circuit device having a ceramic thin fi

Details Semiconductor integrated circuit device having a ceramic thin fi Semiconductor integrated circuit device having a ceramic thin fi

1996-06-11

1998-10-06

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257310, H01L 2100, H01L 2704

Patent

active

058180796

ABSTRACT:
A ferroelectric capacitor comprising a lower electrode, a ceramic capacity film made of a ferroelectric substance and an upper electrode is provided on a substrate insulating film formed on a semiconductor substrate. A layer insulating film is formed on the semiconductor substrate so as to cover the ferroelectric capacitor. An electrode wiring is formed on the layer insulating film. A length L of the surface of the ceramic capacity film which is present between an intersection of the side of the upper electrode and the upper face of the ceramic capacity film and an intersection of the side of the ceramic capacity film and the upper face of the lower electrode and a thickness D of the ceramic capacity film have a relationship of L.gtoreq.2D.

REFERENCES:
patent: 5258093 (1993-11-01), Maniar
patent: 5406447 (1995-04-01), Miyazaki
patent: 5572052 (1996-11-01), Kashihara et al.
1994 Proceedings. 44th Electronic Components & Technology Conf. (Cat. # 94CH3241-7), Wash. DC, May 1-4, 1994, ISBN 0-7803-0914-6, 1994, N.Y. IEEE, USA, pp. 894-899, XP000479199, D. Dimos et al. "Thin-film decoupling capacitors for multi-chip modules".
Thin Solid Films, vol. 259, No. 2, Apr. 15, 1995, Lausanne CH, pp. 264-269.
IEEE International Solid State Circuits Conf., vol. 36, Feb. 1993, N.Y., US, pp. 172-173, 285, S. Nagata et al., "A GaAs MMIC chip-set for mobile communications using on-chip ferroelectrics capacitors".

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