Method for the production of semiconductor devices

Details Method for the production of semiconductor devices Method for the production of semiconductor devices

1987-03-19

1989-06-27

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156664, 427 38, 427431, 427 35, 427 531, 2041293, 20411235, 20419237, 31323101, 31323131, 3133601, 3133631, 31511181, 31511191, 2504923, B44C 122

Patent

active

048426792

ABSTRACT:
A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.

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German Patent Office, Office Action (8/88) with Translation.

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