Method for manufacturing an oxide of semiconductor

Details Method for manufacturing an oxide of semiconductor Method for manufacturing an oxide of semiconductor

1976-12-02

1979-11-27

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148 614R, 148 63, 357 52, 423624, 423617, 423593, 427 87, 427435, 427430B, B05D 512

Patent

active

041762061

ABSTRACT:
A method of manufacturing an oxide layer of semiconductor composition is disclosed.
On the surface portion of semiconductor substrate, an oxide layer is formed by oxidizing it in heated water containing oxygen gas, such, for example, as ozone. One preferred method is to bubble the ozone through hot water which contains near saturated steam at the temperature of the water.

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Deal, "The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam", Journal of Electrochemical Society, Jun. 1963, pp. 527-533.
Phillips et al., "Gallium-Arsenide-Phosphide MIS Capacitor Fabrication and Radiation Studies", Univ. of New Mexico, Eng. Research, 5-1972.
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Mironov et al., C.A. 74, 147362f (1971).
Sommer, C.A. 75, 115,482z (1971).

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