Method for manufacturing single-crystal silicon carbide

Details Method for manufacturing single-crystal silicon carbide Method for manufacturing single-crystal silicon carbide

1991-07-15

1993-05-18

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, 156DIG64, 156DIG68, C30B 2300

Patent

active

052118010

ABSTRACT:
Single crystals of silicon carbide (SiC) can be manufactured by subliming and partially decomposing a base material of crystalline silicon carbide powder and by growing the single crystals from seed crystals. According to the present invention, an excess of silicon is added to the silicon carbide base material. Using this technique, high purity, single-crystal silicon carbide is obtained.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3359077 (1967-12-01), Arst
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4298423 (1981-11-01), Lindmayer
patent: 4623425 (1986-11-01), Suzuki et al.
patent: 4756895 (1988-07-01), Boecker et al.

Affiliated with

Also associated with

Rating

Method for manufacturing single-crystal silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing single-crystal silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing single-crystal silicon carbide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-802035