SRAM with gate oxide films of varied thickness

Details SRAM with gate oxide films of varied thickness SRAM with gate oxide films of varied thickness

1992-05-08

1994-07-05

Limenak, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257410, H01L 2978

Patent

active

053270029

ABSTRACT:
A semiconductor memory device of the SRAM type includes a memory cell including a pair of inverters each having a resistor and a driving transistor connected in series forming a storage node at the junction point thereof. Switching transistors in the memory cell are respectively connected between the storage nodes and bit lines. A film thickness of a gate oxide film of each of the switching transistors (transfer MOS transistors) is larger than a film thickness of a gate oxide film of each of the driving transistors (driver MOS transistors).

REFERENCES:
patent: 4627153 (1986-12-01), Masuoka
patent: 4951112 (1990-08-01), Choi et al.
patent: 5010521 (1991-04-01), Matsui

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