Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-17
1994-07-05
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257309, 257534, 257773, 257926, 437 49, 437 60, 437189, 437919, H01L 2968, H01L 21265
Patent
active
053269985
ABSTRACT:
A semiconductor memory cell and device having a tubular formed storage electrode of a capacitor through which a bit line passes. The source, gate and drain of a switching transistor are arranged in a direction parallel to a longitudinal axis of the tubular storage electrode. An active region also is arranged in a parallel or superposing direction relative to the bit line and in a perpendicular direction relative to the word line. A manufacturing method thereof includes forming a switching transistor, forming a part of the capacitor storage electrode connected with the drain of the switching transistor, forming an oxide film side wall, forming a bit line in parallel to a longitudinal axis of the active region, forming a capacitor storage electrode of tubular form, covering the surface of the capacitor storage electrode with a capacitor dielectric film, and forming a plate electrode of the capacitor thereon.
REFERENCES:
patent: 4641166 (1987-02-01), Takemae et al.
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4754313 (1988-06-01), Takemae et al.
patent: 4764479 (1988-08-01), Kosa
patent: 4953126 (1990-08-01), Ema
patent: 4970564 (1990-11-01), Kimura et al.
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5014103 (1991-05-01), Ema
patent: 5021357 (1991-06-01), Taguchi et al.
A new stacked Capacitor Dram Cell characterized by a storage capacitor on a bit-line structure by Kimura, Kawamoto, Kure, Hasegawa, Etoh, Aoki, Takeda, Sunami and Itoh-Central Research Laboratory, Hitachi Ltd. (IEDM 1988, pp. 596-599).
3-Dimensional stacked capacitor cell for 16M Drams by EMA, Kawanago, Nishi, Yoshida, Nishibe, Yabu, Kodama Nakano and Tagushi-Fugitsu Laboratories Limited (IEDM 1988, pp. 592-595).
Goldstar Electron Co. Ltd.
Loudermilk Alan R.
Wojciechowicz Edward
LandOfFree
Semiconductor memory cell and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory cell and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory cell and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-797739