Semiconductor memory device with trench-type capacitor

Details Semiconductor memory device with trench-type capacitor Semiconductor memory device with trench-type capacitor

1990-11-23

1994-06-07

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, 257908, 257909, 257910, 257911, H01L 2968, H01L 2978, H01L 2992

Patent

active

053192281

ABSTRACT:
A semiconductor memory device having a trench-type capacitor configuration is provided. The device comprises an element isolation insulating film formed on the surface of the substrate in the vicinity of the trenches. The insulating film includes a thickness-reducing region to which the inclined end portion of the capacitor electrode is connected.

REFERENCES:
patent: 4801989 (1989-01-01), Taguchi
patent: 4969022 (1990-11-01), Nishimoto et al.
patent: 5017981 (1991-05-01), Sunami et al.

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