Process for the production of metal wafers and the use of silico

Details Process for the production of metal wafers and the use of silico Process for the production of metal wafers and the use of silico

1992-01-17

1994-03-29

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156608, 156622, 156DIG64, 156DIG88, 164462, 164463, C30B 1330

Patent

active

052981096

ABSTRACT:
Silicon wafers useful in solar cells or wafers of metal are produced by a process for producing wafers of predetermined dimensions by the sheet drawing process in which a melt of the wafer material is crystallized on a substrate wherein the substrate surface is modified by changing the wetting behavior of the substrate toward the melt.

REFERENCES:
patent: 4149884 (1979-04-01), Moringer et al.
patent: 4285386 (1981-08-01), Narasimham
patent: 4343347 (1982-08-01), Liebermann et al.
patent: 4408653 (1983-10-01), Nienart et al.
patent: 4670096 (1987-06-01), Schwirtlich et al.
Patent Abstracts of Japan, vol. 12, No. 67, Mar. 1988, JP62212042.
Journal of Crystal Growth, Bd. 50, Nr.1, Sep. 1980, Supported Growth of Sheet Silicon From the Melt.
Journal of Crystal Growth, Bd. 104, N4. 1, Jul. 1990, Ribbon Growth On Substrate (RGS) A New Approach To High Speed Growth of Silicon Ribbons For Photovaltaics.

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