Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-05
1996-05-28
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257629, 257640, 257646, 257647, 257649, 437235, 437241, 437245, 437187, 437203, 437913, H01L 2712, H01L 2102
Patent
active
055214185
ABSTRACT:
This invention discloses a semiconductor device comprising a semiconductor substrate, a first conducting layer formed on the surface of the semiconductor substrate, an insulating layer formed above the semiconductor substrate, the insulating layer having a contact hole reaching the first conducting layer to expose it, a second conducting layer formed on the insulating layer, the sidewall of the contact hole, and the first conducting layer, and an anti-oxidation layer formed on at least part of the surface of the second conducting layer.
REFERENCES:
patent: 4816882 (1989-03-01), Blanchard
patent: 5017982 (1991-05-01), Kobayashi
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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