Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-01-19
1996-05-28
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055214177
ABSTRACT:
A semiconductor device with a non-volatile memory on a data processing block, having a semiconductor substrate (100); a data processing block (202) having active elements for performing data processing and formed directly on the semiconductor substrate (100); and a memory block (206, 302) for previously storing information necessary for performing the data processing. The passive memory cell array (302) is formed above the active data processing block (202) and the active peripheral circuit (206), with an insulating passivation film (110) interposed therebetween. The memory block includes a memory cell array (302) having a plurality of memory cells as passive elements and a peripheral circuit (206) having active elements for reading data from the memory cell array. The memory cell array (302) has a plurality of conductors (112) in the X direction and conductors (115) in the Y direction, respectively to be selected by the peripheral circuit (206). The X and Y direction conductors (112, 115) are formed as two upper and lower layers with an insulating film (113 ) interposed therebetween. The X and Y direction conductors are three-dimensionally intersected to form the memory cells.
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Kabushiki Kaisha Toshiba
Meier Stephen D.
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