Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-28
1996-05-28
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257356, 257502, 257551, 257577, H01L 2362, H01L 2976, H01L 2900, H01L 27082
Patent
active
055214142
ABSTRACT:
A structure of an electronic device having a predetermined unidirectional conduction threshold is formed on a chip of an N-type semiconductor material and includes a plurality of isolated N-type regions. Each isolated N-type region is bounded laterally by an isolating region and at the bottom by buried P-type and N-type regions which form in combination a junction with a predetermined reverse conduction threshold and means of connecting the junctions of the various isolated regions serially together. The buried N-type region of the first junction in the series is connected to a common electrode, which also is one terminal of the device, over an internal path of the N-type material of the chip, and the buried P-type region of the last junction in the series contains an additional buried N-type region which is connected electrically to a second terminal of the device.
REFERENCES:
Annex of European Search Report (Examiner Fransen L. J. L., Search Completed Oct. 05,1993) Regarding EP-A-0296675, note Patent family members US-A-4736271 and JP-A-1033957; similarly regarding EP-A-0292782, note Patent family members JP-A-6329279, DE-A-3878037 and US-A-4931846).
Carlson David V.
Loke Steven H.
SGS--Thomson Microelectronics S.r.l.
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