Semiconductor device having a solid metal wiring with a contact

Details Semiconductor device having a solid metal wiring with a contact Semiconductor device having a solid metal wiring with a contact

1994-11-23

1996-05-28

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257173, 361 91, H01L 2974, H01L 2362, H02H 320

Patent

active

055214134

ABSTRACT:
On the surface of a p-type semiconductor substrate, an n-type diffusion layer is formed. The diffusion layer is in contact with an aluminum wiring via a contact hole formed through an interlayer insulation layer to electrical connection. Immediately beneath the contact portion of the aluminum wiring, a contact n-type diffusion layer having higher impurity concentration than the n-type diffusion layer and having deeper junction depth. Outside of the contact n-type diffusion layer is surrounded by a low impurity concentration n well. With the construction, when an electrostatic pulse is applied to an external terminal connected to the shallow diffusion layer, junction breakdown of the diffusion layer can be successfully prevented.

REFERENCES:
patent: 3646411 (1972-02-01), Iwasa
patent: 4984031 (1991-01-01), Rinderle
patent: 5362980 (1994-11-01), Gough

Affiliated with

Also associated with

Rating

Semiconductor device having a solid metal wiring with a contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a solid metal wiring with a contact , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a solid metal wiring with a contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-788863