Interconnect for semiconductor devices and method for fabricatin

Details Interconnect for semiconductor devices and method for fabricatin Interconnect for semiconductor devices and method for fabricatin

1995-06-06

1996-12-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257627, 257763, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

055811256

ABSTRACT:
A method for forming an interconnect film (of aluminum or aluminum alloy) by high-temperature sputtering such that the resulting film has a flat surface. The flat surface is desirable for the multilayer interconnect structure, relieves the resist film from halation at the time of exposure, and makes the interconnect immune to electromigration.
An interconnect for semiconductor devices which is fabricated from an underlying film, with crystals therein orienting in the direction perpendicular to the substrate surface, and an interconnect film formed on the underlying film, with crystals therein orienting in alignment with the orientation of crystals in the underlying film and in the direction perpendicular to the substrate surface. The underlying film may be a titanium film with its (002), (001), or (011) crystal plane orienting in the direction perpendicular to the substrate surface. The interconnect film may be an aluminum film or aluminum alloy film with its (111) crystal plane orienting in alignment with the orientation of crystals in the titanium film and in the direction perpendicular to the substrate surface.

REFERENCES:
patent: 4217153 (1980-08-01), Fukunaga et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5312772 (1994-05-01), Yokoyama et al.
patent: 5449641 (1995-09-01), Maeda

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