Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-08-30
1996-12-03
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257342, 257343, 257403, 257339, H01L 2994, H01L 31062, H01L 31113, H01L 2976
Patent
active
055811000
ABSTRACT:
A vertical trench power MOS transistor with low on-resistance is obtained by eliminating the inversion region of a conventional structure. In one embodiment, a deep-depletion region is formed between the trench gates to provide forward blocking capability. In another embodiment, forward blocking is achieved by depletion from the trench gates and a junction depletion from a P diffusion between the gates. Both embodiments are preferably fabricated in a cellular geometry. The device may also be provided in a horizontal conduction configuration in which the MOS gate is disposed on the upper surface of the semiconductor wafer over the deep-depletion region.
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Baliga, B. Jayant, et al., IEEE Electron Device Letters, "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET", vol. 13, No. 8, Aug. 1992, pp. 427-429.
Syau, Tsengyou, et al., IEEE Transactions on Electron Devices, "Comparison of Ultralow Specfic On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's", vol. 41, No. 5, May 1994, pp. 800-808 .
International Rectifier Corporation
Loke Steven H.
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