Static memory with improved write-recovery

Details Static memory with improved write-recovery Static memory with improved write-recovery

1993-11-26

1994-11-29

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

365190, 36523006, 36523008, G11C 700

Patent

active

053696107

ABSTRACT:
An improved circuit is provided for extending the write-recovery time of a high speed memory into the next memory access cycle. In the preferred embodiment, the address buffer circuits turn off at a suitable high rate for read but are controlled to turn off more slowly for a write and to thereby extend the write select signal. In a specific address buffer circuit, FETs are supplied a reduced drain-source current during write and thereby are made to switch at a suitably slower speed.

REFERENCES:
patent: 5070482 (1991-12-01), Miyaji
patent: 5267197 (1993-11-01), McClure
patent: 5285414 (1994-02-01), Yamauchi

Affiliated with

Also associated with

Rating

Static memory with improved write-recovery does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static memory with improved write-recovery, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static memory with improved write-recovery will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-78455